Low Noise Amplifier at 2.4 GHz for Zigbee in MOS 180nm Technology
نویسندگان
چکیده
The main focus of this paper is to design a “Low noise amplifier” for radio frequency applications using MOS 180nm technology. In modern RF electronics, we rarely design an LNA in isolation. Rather, we view and design the RF chain as one entity, performing many iterations among the stages. A low power MOS low noise amplifier (LNA) working at 2.4GHz for ZigBee communication is presented in this paper. The common source (CS) stage with inductive load and Cascode stage with inductive load is adapted and various parameters are compared like Gain, Input intercept point (IIP3) and Noise figure are compared between the two LNA architectures. The simulations are done and compared using H-SPICE.
منابع مشابه
A Broadband Low Power CMOS LNA for 3.1–10.6 GHz UWB Receivers
A new approach for designing an ultra wideband (UWB) CMOS low noise amplifier (LNA) is presented. The aim of this design is to achieve a low noise figure, reasonable power gain and low power consumption in 3.1-10.6 GHz. Also, the figure of merit (FOM) is significantly improved at 180nm technology compared to the other state-of-the-art designs. Improved π-network and T-network are used to obt...
متن کاملAn Inductor-less Sub-mW Low Noise Amplifier for Wireless Sensor Network Applications
This paper presents a Sub-mW differential Common-Gate Low Noise Amplifier (CGLNA) for ZigBee standard. The circuit takes the advantage of shunt feedback and Dual Capacitive Cross Coupling (DCCC) to reduce power consumption and the bandwidth extension capacitors to support 2.4 GHz ISM band. An amplifier employing these techniques has been designed and simulated in 0.18 mm TSMC CMOS technology. T...
متن کاملTunable Low Noise Amplifier by Active Inductance Loading for Zigbee 2.4 GHz Band
Narrow band Low Noise Amplifiers (LNA) use inductors for band selection and input matching to reduce power consumption and reduce thermal noise generation. The LNA amplifies all signals within its fixed band, including blocking signals. This requires a larger dynamic range from the rest of the front end (mixers and analog to digital converters (ADC)). This paper presents a solid state active in...
متن کاملA High Gain and Forward Body Biastwo-stage Ultra-wideband Low Noise Amplifier with Inductive Feedback in 180 nm CMOS Process
This paper presents a two-stage low-noise ultra-wideband amplifier to obtain high and smooth gain in 180nm CMOS Technology. The proposed structure has two common source stages with inductive feedback. First stage is designed about 3GHz frequency and second stage is designed about 8GHz. In simulation, symmetric inductors of TSMC 0.18um CMOS technology in ADS software is used.Simulations results ...
متن کاملDesign of an S-band Ultra-low-noise Amplifier with Frequency Band Switching Capability
In this paper, an ultra-low-noise amplifier with frequency band switching capability is designed, simulated and fabricated. The two frequency ranges of this amplifier consist of the 2.4 to 2.5 GHz and 3.1 GHz to 3.15 GHz frequency bands. The designed amplifier has a noise figure of less than 1dB, a minimum gain of 23 dB and a VSWR of less than 2 in the whole frequency band. The design process s...
متن کامل